IRG4BH20K-S
Infineon Technologies
Infineon Technologies
IGBT 1200V 11A 60W D2PAK
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IRG4BH20K-S
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Product details
The IRG4BH20K-S by Infineon Technologies is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the IRG4BH20K-S is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the IRG4BH20K-S and experience unmatched performance. Contact us today for more details and pricing options.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 11 A
- Current - Collector Pulsed (Icm): 22 A
- Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
- Power - Max: 60 W
- Switching Energy: 450µJ (on), 440µJ (off)
- Input Type: Standard
- Gate Charge: 28 nC
- Td (on/off) @ 25°C: 23ns/93ns
- Test Condition: 960V, 5A, 50Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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