IRG4PF50WPBF
Infineon Technologies
Infineon Technologies
IGBT 900V 51A 200W TO247AC
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Reference Price (USD)
1+
$6.79000
25+
$5.84800
100+
$5.07770
500+
$4.42160
1,000+
$3.85106
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IRG4PF50WPBF
$0.00
Product details
Experience unparalleled power control with the IRG4PF50WPBF single IGBT transistor by Infineon Technologies. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IRG4PF50WPBF boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IRG4PF50WPBF offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Current - Collector (Ic) (Max): 51 A
- Current - Collector Pulsed (Icm): 204 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
- Power - Max: 200 W
- Switching Energy: 190µJ (on), 1.06mJ (off)
- Input Type: Standard
- Gate Charge: 160 nC
- Td (on/off) @ 25°C: 29ns/110ns
- Test Condition: 720V, 28A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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