IRG7CH35UEF
Infineon Technologies
Infineon Technologies
IGBT 1200V ULTRA FAST DIE
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IRG7CH35UEF
$0.00
Product details
Optimize your power electronics with the IRG7CH35UEF single IGBT transistor from Infineon Technologies. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The IRG7CH35UEF is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the IRG7CH35UEF can enhance your next project request a quote now.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 5A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 85 nC
- Td (on/off) @ 25°C: 30ns/160ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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