IRG7CH73K10EF-R
Infineon Technologies
Infineon Technologies
IGBT 1200V ULTRA FAST DIE
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IRG7CH73K10EF-R
$0.00
Product details
Maximize power efficiency with the IRG7CH73K10EF-R single IGBT transistor by Infineon Technologies. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The IRG7CH73K10EF-R features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the IRG7CH73K10EF-R delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 420 nC
- Td (on/off) @ 25°C: 105ns/45ns
- Test Condition: 600V, 75A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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