IRG8CH106K10F
Infineon Technologies
Infineon Technologies
IGBT 1200V 110A DIE
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IRG8CH106K10F
$0.00
Product details
Experience unparalleled power control with the IRG8CH106K10F single IGBT transistor by Infineon Technologies. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IRG8CH106K10F boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IRG8CH106K10F offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 110A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 700 nC
- Td (on/off) @ 25°C: 80ns/380ns
- Test Condition: 600V, 110A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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