IRG8P60N120KDPBF
Infineon Technologies
Infineon Technologies
IGBT 1200V 100A 420W TO-247AC
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IRG8P60N120KDPBF
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Product details
Experience unparalleled power control with the IRG8P60N120KDPBF single IGBT transistor by Infineon Technologies. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IRG8P60N120KDPBF boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IRG8P60N120KDPBF offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 420 W
- Switching Energy: 2.8mJ (on), 2.3mJ (off)
- Input Type: Standard
- Gate Charge: 345 nC
- Td (on/off) @ 25°C: 40ns/240ns
- Test Condition: 600V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): 210 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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