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IRGP30B120KD-EP

Infineon Technologies
IRGP30B120KD-EP Preview
Infineon Technologies
IGBT 1200V 60A 300W TO247AD
$0.00
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1+
$11.84000
25+
$10.19680
100+
$8.85380
500+
$7.70980
1,000+
$6.71498
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Infineon Technologies IRGP30B120KD-EP is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IRGP30B120KD-EP

IRGP30B120KD-EP

$0.00

Product details

The IRGP30B120KD-EP from Infineon Technologies is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the IRGP30B120KD-EP ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the IRGP30B120KD-EP and elevate your power management solutions today. For pricing and availability, submit an inquiry online.

General specs

  • Product Status: Obsolete
  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
  • Power - Max: 300 W
  • Switching Energy: 1.07mJ (on), 1.49mJ (off)
  • Input Type: Standard
  • Gate Charge: 169 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 25A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 300 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD

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