PTFA091201GL V1
Infineon Technologies
Infineon Technologies
IC FET RF LDMOS 120W PG-63248-2
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PTFA091201GL V1
$0.00
Product details
Maximize your RF capabilities with the PTFA091201GL V1 RF MOSFET transistor from Infineon Technologies, a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The PTFA091201GL V1 handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The PTFA091201GL V1 is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The PTFA091201GL V1 ensures consistent operation across a wide frequency range. Infineon Technologies has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the PTFA091201GL V1 is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the PTFA091201GL V1 from Infineon Technologies for superior RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 18.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 750 mA
- Power - Output: 110W
- Voltage - Rated: 65 V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: PG-63248-2
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