PTFA190451FV4R250XTMA1
Infineon Technologies
Infineon Technologies
IC FET RF LDMOS 45W H-37265-2
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PTFA190451FV4R250XTMA1
$0.00
Product details
The PTFA190451FV4R250XTMA1 from Infineon Technologies is a premium RF MOSFET transistor in the discrete semiconductor products market. Designed for high-frequency applications, it provides superior signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The PTFA190451FV4R250XTMA1 excels in power handling and thermal stability, ensuring dependable performance. Its high gain and linearity make it ideal for precision RF systems. The compact and robust design allows for easy integration into various electronic layouts. It is engineered to deliver consistent results in both commercial and industrial environments. Key features include fast switching, low distortion, and excellent impedance matching. These attributes make the PTFA190451FV4R250XTMA1 perfect for wireless communication, radar systems, and broadcast technology. It is also highly effective in medical devices, automotive electronics, and industrial automation. The PTFA190451FV4R250XTMA1 offers reliable and accurate signal processing in all applications. Infineon Technologies has developed this MOSFET to meet the highest quality benchmarks. For top-tier RF performance, the PTFA190451FV4R250XTMA1 is a trusted choice. Improve your electronic projects with this high-quality transistor. Contact us for pricing details or submit an online inquiry today. Choose the PTFA190451FV4R250XTMA1 from Infineon Technologies for exceptional RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.96GHz
- Gain: 17.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 450 mA
- Power - Output: 11W
- Voltage - Rated: 65 V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37265-2
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