PTFA212001EV4R250XTMA1
Infineon Technologies
Infineon Technologies
FET RF 65V 2.14GHZ H-36260-2
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PTFA212001EV4R250XTMA1
$0.00
Product details
Upgrade your RF systems with the PTFA212001EV4R250XTMA1 RF MOSFET transistor from Infineon Technologies, a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The PTFA212001EV4R250XTMA1 offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the PTFA212001EV4R250XTMA1 ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The PTFA212001EV4R250XTMA1 ensures accurate and stable signal processing in all scenarios. Infineon Technologies has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the PTFA212001EV4R250XTMA1 is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the PTFA212001EV4R250XTMA1 from Infineon Technologies for superior RF performance.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.14GHz
- Gain: 15.8dB
- Voltage - Test: 30 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.6 A
- Power - Output: 50W
- Voltage - Rated: 65 V
- Package / Case: H-36260-2
- Supplier Device Package: H-36260-2
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