PTFA212401E V4
Infineon Technologies
Infineon Technologies
FET RF 65V 2.14GHZ H-36260-2
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PTFA212401E V4
$0.00
Product details
The PTFA212401E V4 by Infineon Technologies is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The PTFA212401E V4 excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the PTFA212401E V4 perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The PTFA212401E V4 delivers precise and stable signal processing across all applications. Infineon Technologies has produced this MOSFET to meet the highest standards. For reliable RF performance, the PTFA212401E V4 is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the PTFA212401E V4 from Infineon Technologies for unmatched RF quality.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.14GHz
- Gain: 15.8dB
- Voltage - Test: 30 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.6 A
- Power - Output: 50W
- Voltage - Rated: 65 V
- Package / Case: H-36260-2
- Supplier Device Package: H-36260-2
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