SGB20N60ATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 40A 179W TO263-3
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SGB20N60ATMA1
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Product details
The SGB20N60ATMA1 by Infineon Technologies is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the SGB20N60ATMA1 is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the SGB20N60ATMA1 and experience unmatched performance. Contact us today for more details and pricing options.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
- Power - Max: 179 W
- Switching Energy: 440µJ (on), 330µJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 36ns/225ns
- Test Condition: 400V, 20A, 16Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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