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SMBT2222AE6327HTSA1

Infineon Technologies
SMBT2222AE6327HTSA1 Preview
Infineon Technologies
TRANS NPN 40V 0.6A SOT23
$0.40
Available to order
Reference Price (USD)
3,000+
$0.04350
6,000+
$0.03824
15,000+
$0.03298
30,000+
$0.03123
75,000+
$0.02948
150,000+
$0.02655
Exquisite packaging
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Infineon Technologies SMBT2222AE6327HTSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SMBT2222AE6327HTSA1

SMBT2222AE6327HTSA1

$0.40

Product details

Discover the SMBT2222AE6327HTSA1, a high-efficiency Bipolar Junction Transistor from Infineon Technologies designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The SMBT2222AE6327HTSA1 demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the SMBT2222AE6327HTSA1 simplifies circuit design challenges. Infineon Technologies's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.

General specs

  • Product Status: Not For New Designs
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 330 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23

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