IGN1011L1200
Integra Technologies Inc.
Integra Technologies Inc.
GAN, RF POWER TRANSISTOR, L-BAND
$914.14
Available to order
Reference Price (USD)
1+
$914.14000
500+
$904.9986
1000+
$895.8572
1500+
$886.7158
2000+
$877.5744
2500+
$868.433
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IGN1011L1200
$914.14
Product details
The IGN1011L1200 from Integra Technologies Inc. is a premium RF MOSFET transistor in the discrete semiconductor products market. Designed for high-frequency applications, it provides superior signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The IGN1011L1200 excels in power handling and thermal stability, ensuring dependable performance. Its high gain and linearity make it ideal for precision RF systems. The compact and robust design allows for easy integration into various electronic layouts. It is engineered to deliver consistent results in both commercial and industrial environments. Key features include fast switching, low distortion, and excellent impedance matching. These attributes make the IGN1011L1200 perfect for wireless communication, radar systems, and broadcast technology. It is also highly effective in medical devices, automotive electronics, and industrial automation. The IGN1011L1200 offers reliable and accurate signal processing in all applications. Integra Technologies Inc. has developed this MOSFET to meet the highest quality benchmarks. For top-tier RF performance, the IGN1011L1200 is a trusted choice. Improve your electronic projects with this high-quality transistor. Contact us for pricing details or submit an online inquiry today. Choose the IGN1011L1200 from Integra Technologies Inc. for exceptional RF solutions.
General specs
- Product Status: Active
- Transistor Type: HEMT
- Frequency: 1.03GHz ~ 1.09GHz
- Gain: 16.8dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 160 mA
- Power - Output: 1250W
- Voltage - Rated: 180 V
- Package / Case: PL84A1
- Supplier Device Package: PL84A1
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