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IGN1011L70

Integra Technologies Inc.
IGN1011L70 Preview
Integra Technologies Inc.
GAN, RF POWER TRANSISTOR, L-BAND
$222.00
Available to order
Reference Price (USD)
1+
$222.00000
500+
$219.78
1000+
$217.56
1500+
$215.34
2000+
$213.12
2500+
$210.9
Exquisite packaging
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Integra Technologies Inc. IGN1011L70 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IGN1011L70

IGN1011L70

$222.00

Product details

Discover the IGN1011L70 RF MOSFET transistor from Integra Technologies Inc., a high-efficiency solution for discrete semiconductor products. This transistor is optimized for RF applications, providing excellent amplification and signal integrity. Its advanced FET technology ensures low noise and high gain, essential for precision electronics. The IGN1011L70 is designed to handle high power levels while maintaining thermal efficiency. With superior linearity and switching speed, it is ideal for high-frequency circuits. The transistor's robust construction ensures reliability in challenging environments. Its compact design allows for flexible integration into various electronic systems. The IGN1011L70 is perfect for applications requiring stable and efficient RF performance. Key advantages include minimal signal loss, high impedance matching, and excellent thermal management. These features make it suitable for use in wireless base stations, satellite receivers, and defense communication systems. It is also well-suited for consumer electronics, automotive infotainment, and industrial control systems. The IGN1011L70 delivers consistent performance across a wide range of frequencies. Integra Technologies Inc. has crafted this MOSFET to meet the highest industry benchmarks. For superior RF functionality, the IGN1011L70 is an outstanding choice. Upgrade your electronic designs with this high-quality transistor. Request a quote or submit an inquiry online to get started. Trust the IGN1011L70 from Integra Technologies Inc. for all your RF needs.

General specs

  • Product Status: Active
  • Transistor Type: GaN HEMT
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 22dB
  • Voltage - Test: 50 V
  • Current Rating (Amps): -
  • Noise Figure: -
  • Current - Test: 22 mA
  • Power - Output: 80W
  • Voltage - Rated: 120 V
  • Package / Case: PL32A2
  • Supplier Device Package: PL32A2

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