IGN1214L500B
Integra Technologies Inc.
Integra Technologies Inc.
GAN, RF POWER TRANSISTOR, L-BAND
$1,018.30
Available to order
Reference Price (USD)
1+
$1018.30000
500+
$1008.117
1000+
$997.934
1500+
$987.751
2000+
$977.568
2500+
$967.385
Exquisite packaging
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IGN1214L500B
$1,018.30
Product details
The IGN1214L500B from Integra Technologies Inc. is a top-tier RF MOSFET transistor in the discrete semiconductor products category. Designed for high-frequency applications, it offers exceptional signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The IGN1214L500B excels in power handling and thermal performance, ensuring reliable operation. Its high gain and linearity make it ideal for precision RF systems. The compact and durable design allows for easy integration into various circuits. It is engineered to deliver consistent performance in both commercial and industrial environments. Key features include fast switching, low distortion, and superior impedance matching. These attributes make the IGN1214L500B perfect for telecommunications equipment, radar systems, and broadcast technology. It is also highly effective in medical diagnostic devices, automotive safety systems, and industrial automation. The IGN1214L500B provides reliable and accurate signal processing in all scenarios. Integra Technologies Inc. has developed this MOSFET to meet stringent quality standards. For high-performance RF solutions, the IGN1214L500B is a trusted option. Enhance your electronic projects with this advanced transistor. Contact us for pricing details or submit an online inquiry today. Choose the IGN1214L500B from Integra Technologies Inc. for exceptional RF performance.
General specs
- Product Status: Active
- Transistor Type: HEMT
- Frequency: 1.2GHz ~ 1.4GHz
- Gain: 15dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: 650W
- Voltage - Rated: 160 V
- Package / Case: PL95A1
- Supplier Device Package: PL95A1
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