IGN1214M300
Integra Technologies Inc.
Integra Technologies Inc.
GAN, RF POWER TRANSISTOR, L-BAND
$933.33
Available to order
Reference Price (USD)
1+
$933.33000
500+
$923.9967
1000+
$914.6634
1500+
$905.3301
2000+
$895.9968
2500+
$886.6635
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IGN1214M300
$933.33
Product details
The IGN1214M300 by Integra Technologies Inc. is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The IGN1214M300 excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the IGN1214M300 perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The IGN1214M300 delivers precise and stable signal processing across all applications. Integra Technologies Inc. has produced this MOSFET to meet the highest standards. For reliable RF performance, the IGN1214M300 is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the IGN1214M300 from Integra Technologies Inc. for unmatched RF quality.
General specs
- Product Status: Active
- Transistor Type: -
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