IS46DR16320E-3DBLA2-TR
ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT PARALLEL 84TWBGA
$5.62
Available to order
Reference Price (USD)
2,500+
$5.26176
Exquisite packaging
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EMS | 3-7 days |
ISSI, Integrated Silicon Solution Inc IS46DR16320E-3DBLA2-TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
Enhance your system's performance with the IS46DR16320E-3DBLA2-TR memory IC from ISSI, Integrated Silicon Solution Inc, a cutting-edge solution for modern data storage needs. This memory product delivers exceptional speed and reliability, engineered to meet the rigorous demands of today's electronic applications. Its innovative design ensures optimal performance in various operating conditions.
The IS46DR16320E-3DBLA2-TR boasts features such as extended endurance, wide operating voltage range, and excellent temperature stability. These characteristics make it particularly suitable for applications requiring consistent performance under challenging environmental conditions. The memory IC maintains data integrity even during power fluctuations, providing peace of mind for critical systems.
Ideal applications include aerospace avionics systems, military communication equipment, and industrial control units. The IS46DR16320E-3DBLA2-TR also excels in IoT devices requiring persistent memory and enterprise storage solutions demanding high capacity. Its versatility extends to renewable energy systems where reliable data storage is crucial for operation monitoring.
Contact us today through our online inquiry system to learn more about the IS46DR16320E-3DBLA2-TR and how it can benefit your specific application. Our experts are ready to assist with technical details and procurement options for this ISSI, Integrated Silicon Solution Inc memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-TWBGA (8x12.5)