DHG55I3300FE
IXYS
IXYS
POWER DIODE DISCRETES-SONIC I4-P
$40.16
Available to order
Reference Price (USD)
1+
$40.15596
500+
$39.7544004
1000+
$39.3528408
1500+
$38.9512812
2000+
$38.5497216
2500+
$38.148162
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DHG55I3300FE
$40.16
Product details
Experience superior rectification performance with the DHG55I3300FE single diode from IXYS, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The DHG55I3300FE performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the DHG55I3300FE delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3300 V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 60 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.65 µs
- Current - Reverse Leakage @ Vr: 100 µA @ 3300 V
- Capacitance @ Vr, F: 16pF @ 1.8kV, 1MHz
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5 (2 Leads)
- Supplier Device Package: ISOPLUS i4-PAC™
- Operating Temperature - Junction: -40°C ~ 150°C
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