Shopping cart

Subtotal: $0.00

IXFB110N60P3

IXYS
IXFB110N60P3 Preview
IXYS
MOSFET N-CH 600V 110A PLUS264
$24.46
Available to order
Reference Price (USD)
1+
$18.22000
25+
$15.31800
100+
$14.07600
500+
$12.00600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

IXYS IXFB110N60P3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IXFB110N60P3

IXFB110N60P3

$24.46

Product details

Optimize your power management solutions with the IXFB110N60P3 single MOSFET transistor from IXYS, a standout in the Discrete Semiconductor Products field (Transistors - FETs, MOSFETs - Single). This high-performance component delivers exceptional electrical characteristics designed for efficiency and reliability in demanding applications. The IXFB110N60P3 features advanced semiconductor technology that minimizes energy loss while maximizing power handling capabilities. Its innovative design includes enhanced protection features against common electrical stresses, ensuring long-term operational stability. The MOSFET excels in applications ranging from server power supplies and network equipment to automotive electronics and industrial control systems. For renewable energy implementations, it's particularly effective in micro-inverters and charge controllers. The component also performs exceptionally in professional audio equipment and high-end power amplifiers where clean power delivery is crucial. With its combination of robust construction and electrical efficiency, the IXFB110N60P3 provides designers with a reliable solution for their power switching needs. Ready to incorporate this high-quality MOSFET into your designs? Visit our website to submit your inquiry online our sales team will provide prompt assistance with specifications, availability, and pricing information tailored to your requirements.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1890W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS264™
  • Package / Case: TO-264-3, TO-264AA

Viewed products

onsemi

NTLUS020N03CTAG

$0.00 (not set)
Microchip Technology

APT50M65LLLG

$0.00 (not set)
Infineon Technologies

BSZ110N08NS5ATMA1

$0.00 (not set)
Infineon Technologies

IRF3415STRLPBF

$0.00 (not set)
Infineon Technologies

BSC118N10NSGATMA1

$0.00 (not set)
Vishay Siliconix

SIHG73N60AE-GE3

$0.00 (not set)
NXP USA Inc.

BUK954R8-60E,127

$0.00 (not set)
Infineon Technologies

IRF6645TRPBF

$0.00 (not set)
Microchip Technology

VP2450N8-G

$0.00 (not set)
Infineon Technologies

BSS214NWH6327XTSA1

$0.00 (not set)
Top