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IXFN360N10T

IXYS
IXFN360N10T Preview
IXYS
MOSFET N-CH 100V 360A SOT-227B
$27.16
Available to order
Reference Price (USD)
1+
$20.99000
10+
$19.08000
30+
$17.64900
100+
$16.21800
250+
$14.78700
500+
$13.83300
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IXFN360N10T

IXFN360N10T

$27.16

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 830W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC

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