IXFQ60N50P3
IXYS
IXYS
MOSFET N-CH 500V 60A TO3P
$10.20
Available to order
Reference Price (USD)
1+
$7.00000
30+
$5.74000
120+
$5.18000
510+
$4.34000
1,020+
$3.92000
Exquisite packaging
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IXFQ60N50P3
$10.20
Product details
Elevate your electronic designs with the IXFQ60N50P3 single MOSFET transistor from IXYS, a premium offering in the Discrete Semiconductor Products market (Transistors - FETs, MOSFETs - Single). This high-performance component delivers exceptional power handling capabilities combined with efficient switching characteristics. The IXFQ60N50P3 features advanced semiconductor architecture that ensures minimal energy loss and optimal thermal management. Its design incorporates protective features that enhance reliability in demanding operating conditions. The MOSFET demonstrates excellent performance in automotive electronics, particularly in engine control units, lighting systems, and battery management solutions. Industrial applications include motor drives, power tools, and factory automation equipment. For renewable energy systems, it's particularly effective in wind power converters and solar tracking mechanisms. The component also finds significant use in high-end computing applications and data storage systems. With its combination of power efficiency and robust construction, the IXFQ60N50P3 provides design engineers with a versatile solution for various power management challenges. To discover how this MOSFET can benefit your specific application, we encourage you to submit an online inquiry. Our knowledgeable staff will provide detailed product information and purchasing options to meet your project requirements and timeline.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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