IXGH32N60B
IXYS
IXYS
IGBT 600V 60A 200W TO247AD
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IXGH32N60B
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Product details
Experience unparalleled power control with the IXGH32N60B single IGBT transistor by IXYS. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IXGH32N60B boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IXGH32N60B offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
- Power - Max: 200 W
- Switching Energy: 800µJ (off)
- Input Type: Standard
- Gate Charge: 125 nC
- Td (on/off) @ 25°C: 25ns/100ns
- Test Condition: 480V, 32A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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