IXGR35N120BD1
IXYS
IXYS
IGBT 1200V 54A 250W ISOPLUS247
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30+
$9.75067
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IXGR35N120BD1
$0.00
Product details
The IXGR35N120BD1 by IXYS is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the IXGR35N120BD1 is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the IXGR35N120BD1 and experience unmatched performance. Contact us today for more details and pricing options.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 54 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 35A
- Power - Max: 250 W
- Switching Energy: 900µJ (on), 3.8mJ (off)
- Input Type: Standard
- Gate Charge: 140 nC
- Td (on/off) @ 25°C: 40ns/270ns
- Test Condition: 960V, 35A, 3Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISOPLUS247™
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