IXGT30N60B2
IXYS
IXYS
IGBT 600V 70A 190W TO268
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IXGT30N60B2
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Product details
Experience unparalleled power control with the IXGT30N60B2 single IGBT transistor by IXYS. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IXGT30N60B2 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IXGT30N60B2 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
- Power - Max: 190 W
- Switching Energy: 320µJ (off)
- Input Type: Standard
- Gate Charge: 66 nC
- Td (on/off) @ 25°C: 13ns/110ns
- Test Condition: 400V, 24A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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