IXSQ20N60B2D1
IXYS
IXYS
IGBT 600V 35A 190W TO3P
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IXYS IXSQ20N60B2D1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IXSQ20N60B2D1
$0.00
Product details
The IXSQ20N60B2D1 from IXYS is a premium single IGBT transistor designed for high-efficiency power switching. This discrete semiconductor product is perfect for applications in traction systems, uninterruptible power supplies, and industrial motor controls. With its superior thermal performance and low on-state voltage, the IXSQ20N60B2D1 ensures optimal energy savings and extended operational life. Its rugged design withstands high current and voltage stresses, making it a reliable choice for critical power management tasks. Engineers will find its compatibility with various gate drivers a significant advantage. Discover the benefits of the IXSQ20N60B2D1 for your next project request a quote today.
General specs
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 35 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
- Power - Max: 190 W
- Switching Energy: 380µJ (off)
- Input Type: Standard
- Gate Charge: 33 nC
- Td (on/off) @ 25°C: 30ns/116ns
- Test Condition: -
- Reverse Recovery Time (trr): 30 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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