Shopping cart

Subtotal: $0.00

IXTA2R4N120P-TRL

IXYS
IXTA2R4N120P-TRL Preview
IXYS
MOSFET N-CH 1200V 2.4A TO263
$4.46
Available to order
Reference Price (USD)
1+
$4.46028
500+
$4.4156772
1000+
$4.3710744
1500+
$4.3264716
2000+
$4.2818688
2500+
$4.237266
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

IXYS IXTA2R4N120P-TRL is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IXTA2R4N120P-TRL

IXTA2R4N120P-TRL

$4.46

Product details

Optimize your power management solutions with the IXTA2R4N120P-TRL single MOSFET transistor from IXYS, a standout in the Discrete Semiconductor Products field (Transistors - FETs, MOSFETs - Single). This high-performance component delivers exceptional electrical characteristics designed for efficiency and reliability in demanding applications. The IXTA2R4N120P-TRL features advanced semiconductor technology that minimizes energy loss while maximizing power handling capabilities. Its innovative design includes enhanced protection features against common electrical stresses, ensuring long-term operational stability. The MOSFET excels in applications ranging from server power supplies and network equipment to automotive electronics and industrial control systems. For renewable energy implementations, it's particularly effective in micro-inverters and charge controllers. The component also performs exceptionally in professional audio equipment and high-end power amplifiers where clean power delivery is crucial. With its combination of robust construction and electrical efficiency, the IXTA2R4N120P-TRL provides designers with a reliable solution for their power switching needs. Ready to incorporate this high-quality MOSFET into your designs? Visit our website to submit your inquiry online our sales team will provide prompt assistance with specifications, availability, and pricing information tailored to your requirements.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1207 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Viewed products

Rohm Semiconductor

SCT4062KRC15

$0.00 (not set)
Vishay Siliconix

SQ2364EES-T1_BE3

$0.00 (not set)
Infineon Technologies

IRL2910PBF

$0.00 (not set)
Infineon Technologies

AUIRF7675M2TR

$0.00 (not set)
Vishay Siliconix

SIR426DP-T1-GE3

$0.00 (not set)
onsemi

NVMFS016N06CT1G

$0.00 (not set)
Sanken

EKI06051

$0.00 (not set)
Rohm Semiconductor

RQ6C050UNTR

$0.00 (not set)
Infineon Technologies

IRF5305PBF

$0.00 (not set)
NXP Semiconductors

PSMN1R1-30PL,127

$0.00 (not set)
Top