Shopping cart

Subtotal: $0.00

IXTP10N60P

IXYS
IXTP10N60P Preview
IXYS
MOSFET N-CH 600V 10A TO220AB
$3.31
Available to order
Reference Price (USD)
50+
$2.40000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

IXYS IXTP10N60P is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IXTP10N60P

IXTP10N60P

$3.31

Product details

Enhance your electronic designs with the IXTP10N60P single MOSFET transistor from IXYS, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The IXTP10N60P features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the IXTP10N60P particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the IXTP10N60P represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

Viewed products

onsemi

FCH072N60

$0.00 (not set)
Infineon Technologies

AUIRF3710ZSTRL

$0.00 (not set)
IXYS

IXFH60N65X2

$0.00 (not set)
STMicroelectronics

STB25NF06LAG

$0.00 (not set)
onsemi

FCA36N60NF

$0.00 (not set)
PN Junction Semiconductor

P3M06300T3

$0.00 (not set)
onsemi

FDMC3612-L701

$0.00 (not set)
onsemi

FDMC86340

$0.00 (not set)
NXP Semiconductors

BUK9275-100A,118

$0.00 (not set)
Infineon Technologies

IPB60R199CPATMA1

$0.00 (not set)
Top