Shopping cart

Subtotal: $0.00

IXTP86N20T

IXYS
IXTP86N20T Preview
IXYS
MOSFET N-CH 200V 86A TO220AB
$6.08
Available to order
Reference Price (USD)
50+
$3.37500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

IXYS IXTP86N20T is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IXTP86N20T

IXTP86N20T

$6.08

Product details

Enhance your electronic designs with the IXTP86N20T single MOSFET transistor from IXYS, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The IXTP86N20T features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the IXTP86N20T particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the IXTP86N20T represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

Viewed products

Yangzhou Yangjie Electronic Technology Co.,Ltd

2N7002KW-F2-0000HF

$0.00 (not set)
STMicroelectronics

STF7N60M2

$0.00 (not set)
STMicroelectronics

STF9N60M2

$0.00 (not set)
Central Semiconductor Corp

CEDM8004 BK PBFREE

$0.00 (not set)
Rohm Semiconductor

RUM001L02T2CL

$0.00 (not set)
Renesas Electronics America Inc

RJK0366DPA-02#J0B

$0.00 (not set)
Infineon Technologies

IPP65R310CFDXKSA1

$0.00 (not set)
Vishay Siliconix

IRF614PBF

$0.00 (not set)
Vishay Siliconix

SI3457CDV-T1-GE3

$0.00 (not set)
Diodes Incorporated

DMP2123L-7

$0.00 (not set)
Top