IXXN200N65A4
IXYS
IXYS
IGBT
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Reference Price (USD)
10+
$27.38900
Exquisite packaging
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IXXN200N65A4
$0.00
Product details
Experience unparalleled power control with the IXXN200N65A4 single IGBT transistor by IXYS. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IXXN200N65A4 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IXXN200N65A4 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 440 A
- Current - Collector Pulsed (Icm): 1200 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A
- Power - Max: 1250 W
- Switching Energy: 8.8mJ (on), 6.7mJ (off)
- Input Type: Standard
- Gate Charge: 736 nC
- Td (on/off) @ 25°C: 140ns/1.04µs
- Test Condition: 400V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): 160 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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