IT122 PDIP 8L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
TIGHTLY MATCHED, MONOLITHIC DUAL
$5.63
Available to order
Reference Price (USD)
1+
$5.63000
500+
$5.5737
1000+
$5.5174
1500+
$5.4611
2000+
$5.4048
2500+
$5.3485
Exquisite packaging
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IT122 PDIP 8L
$5.63
Product details
Discover the engineering excellence of Linear Integrated Systems, Inc.'s IT122 PDIP 8L, a premier Bipolar Junction Transistor (BJT) Array in the Discrete Semiconductor Products category. This advanced component integrates multiple transistors with matched characteristics for precision circuit applications. The IT122 PDIP 8L offers outstanding current handling capacity with excellent thermal properties. Its design ensures parameter consistency across all transistors in the array. The product features low saturation voltage for enhanced energy efficiency in operation. With its high-frequency response, it suits demanding switching applications. The IT122 PDIP 8L maintains stable performance across wide temperature ranges. Its compact form factor supports space-constrained design requirements. Audio amplification systems benefit from its low distortion characteristics. Power supply circuits utilize its reliable switching performance. Sensor interface electronics employ its precise current amplification. The IT122 PDIP 8L also serves critical functions in automotive control modules. Linear Integrated Systems, Inc. has applied rigorous testing procedures to guarantee product reliability. The component's construction allows for effective thermal management in operation. Its design complies with international standards for quality and safety. Engineers value its consistent performance in both prototype and production environments. The IT122 PDIP 8L represents a versatile solution for diverse electronic applications. To learn more about this high-performance BJT Array, submit your inquiry through our website today.
General specs
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 10mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50µA, 500µA
- Current - Collector Cutoff (Max): 1nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 180MHz
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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