MAGX-000912-125L00
MACOM Technology Solutions
MACOM Technology Solutions
TRANSISTOR GAN 125W 960-1215MHZ
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MAGX-000912-125L00
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Product details
Maximize your RF capabilities with the MAGX-000912-125L00 RF MOSFET transistor from MACOM Technology Solutions, a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The MAGX-000912-125L00 handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The MAGX-000912-125L00 is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The MAGX-000912-125L00 ensures consistent operation across a wide frequency range. MACOM Technology Solutions has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the MAGX-000912-125L00 is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the MAGX-000912-125L00 from MACOM Technology Solutions for superior RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: HEMT
- Frequency: 960MHz ~ 1.215GHz
- Gain: 18.9dB
- Voltage - Test: 50 V
- Current Rating (Amps): 4A
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 125W
- Voltage - Rated: 65 V
- Package / Case: -
- Supplier Device Package: -
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