MAGX-001214-500L0S
MACOM Technology Solutions
MACOM Technology Solutions
TRANSISTOR GAN 500W 1.2-1.4GHZ
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MAGX-001214-500L0S
$0.00
Product details
The MAGX-001214-500L0S by MACOM Technology Solutions is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The MAGX-001214-500L0S excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the MAGX-001214-500L0S perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The MAGX-001214-500L0S delivers precise and stable signal processing across all applications. MACOM Technology Solutions has produced this MOSFET to meet the highest standards. For reliable RF performance, the MAGX-001214-500L0S is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the MAGX-001214-500L0S from MACOM Technology Solutions for unmatched RF quality.
General specs
- Product Status: Obsolete
- Transistor Type: HEMT
- Frequency: 1.2GHz ~ 1.4GHz
- Gain: 19.22dB
- Voltage - Test: 50 V
- Current Rating (Amps): 18.1A
- Noise Figure: -
- Current - Test: 400 mA
- Power - Output: 500W
- Voltage - Rated: 65 V
- Package / Case: -
- Supplier Device Package: -
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