MAGX-001220-100L00
MACOM Technology Solutions
MACOM Technology Solutions
TRANSISTOR GAN 100W 1.2-2.0GHZ
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MACOM Technology Solutions MAGX-001220-100L00 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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MAGX-001220-100L00
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Product details
The MAGX-001220-100L00 by MACOM Technology Solutions is a premium RF MOSFET transistor designed for the discrete semiconductor products segment. This high-frequency transistor is built to deliver exceptional performance in RF amplification and switching applications. Its advanced FET architecture ensures low noise and high efficiency, making it a preferred choice for sensitive electronic systems. The MAGX-001220-100L00 offers excellent power handling and thermal stability, crucial for prolonged operation. With its high gain and linearity, it is perfect for demanding RF environments. The transistor's compact and durable design facilitates easy integration into various circuit configurations. It is engineered to provide reliable performance in both commercial and industrial settings. Key features include fast switching capabilities, low distortion, and superior impedance matching. These characteristics make the MAGX-001220-100L00 ideal for use in mobile communication devices, RF transceivers, and navigation systems. It is also highly effective in medical imaging equipment, automotive radar, and industrial sensors. The MAGX-001220-100L00 ensures consistent and accurate signal processing across all applications. MACOM Technology Solutions has designed this MOSFET to meet rigorous quality and performance standards. For engineers looking for a high-performance RF solution, the MAGX-001220-100L00 is a reliable option. Elevate your RF designs with this cutting-edge transistor. To learn more about pricing and specifications, contact us or submit an online inquiry. Choose the MAGX-001220-100L00 from MACOM Technology Solutions for unparalleled RF performance.
General specs
- Product Status: Obsolete
- Transistor Type: HEMT
- Frequency: 1.2GHz ~ 2GHz
- Gain: 14.8dB
- Voltage - Test: 50 V
- Current Rating (Amps): 4.5A
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 100W
- Voltage - Rated: 65 V
- Package / Case: -
- Supplier Device Package: -
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