1N5809US
Microchip Technology
Microchip Technology
DIODE GEN PURP 100V 3A B-MELF
$8.20
Available to order
Reference Price (USD)
1+
$11.30000
10+
$10.17000
100+
$8.36200
500+
$7.00600
1,000+
$6.32800
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
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1N5809US
$8.20
Product details
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 60pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 175°C
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