1N647-1E3/TR
Microchip Technology
Microchip Technology
SIGNAL/COMPUTER DIODE
$2.18
Available to order
Reference Price (USD)
1+
$2.17501
500+
$2.1532599
1000+
$2.1315098
1500+
$2.1097597
2000+
$2.0880096
2500+
$2.0662595
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1N647-1E3/TR
$2.18
Product details
Experience superior rectification performance with the 1N647-1E3/TR single diode from Microchip Technology, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The 1N647-1E3/TR performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the 1N647-1E3/TR delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 nA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
- Operating Temperature - Junction: -65°C ~ 175°C
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