Shopping cart

Subtotal: $0.00

2N3766

Microchip Technology
2N3766 Preview
Microchip Technology
TRANS NPN 60V 500UA TO66
$29.58
Available to order
Reference Price (USD)
1+
$29.58000
500+
$29.2842
1000+
$28.9884
1500+
$28.6926
2000+
$28.3968
2500+
$28.101
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Microchip Technology 2N3766 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
2N3766

2N3766

$29.58

Product details

Discover the 2N3766, a high-efficiency Bipolar Junction Transistor from Microchip Technology designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The 2N3766 demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the 2N3766 simplifies circuit design challenges. Microchip Technology's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 µA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
  • Power - Max: 25 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)

Viewed products

Diodes Incorporated

ZXTN619MATA

$0.00 (not set)
Nexperia USA Inc.

BCW30,235

$0.00 (not set)
Toshiba Semiconductor and Storage

2SA1313-Y,LF

$0.00 (not set)
Infineon Technologies

BC846BWE6327

$0.00 (not set)
Central Semiconductor Corp

CZT3019 TR PBFREE

$0.00 (not set)
onsemi

MJ21193G

$0.00 (not set)
Microchip Technology

JANSR2N2906AUA/TR

$0.00 (not set)
onsemi

KSA1013OBU

$0.00 (not set)
onsemi

MMBTA14LT1G

$0.00 (not set)
Diodes Incorporated

ZUMT717TA

$0.00 (not set)
Top