2N5290
Microchip Technology
Microchip Technology
POWER BJT
$499.12
Available to order
Reference Price (USD)
1+
$499.12500
500+
$494.13375
1000+
$489.1425
1500+
$484.15125
2000+
$479.16
2500+
$474.16875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Microchip Technology 2N5290 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
2N5290
$499.12
Product details
The 2N5290 from Microchip Technology is a premium-grade Bipolar Junction Transistor designed for demanding Discrete Semiconductor Products applications. This single BJT combines high current capability with fast switching characteristics for versatile circuit implementation. Its advanced epitaxial base structure ensures uniform current distribution and thermal management. The transistor exhibits low saturation voltage, reducing power dissipation in switching applications. Engineers value the 2N5290 for its tight parameter tolerances and batch-to-batch consistency. Typical circuit implementations include class AB amplifiers, electronic switches, and voltage-controlled oscillators. Automotive electronics, power tools, and industrial control systems commonly utilize this reliable component. The 2N5290 meets stringent quality standards with comprehensive production testing and failure analysis. Its moisture sensitivity level (MSL) rating accommodates standard manufacturing processes. Microchip Technology supports the 2N5290 with detailed application notes and SPICE models for design simulation. For volume pricing, lead time information, or technical consultation, please submit your inquiry through our responsive online system.
General specs
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 116 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Stud Mount
- Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
- Supplier Device Package: TO-61
Viewed products