Shopping cart

Subtotal: $0.00

2N6351

Microchip Technology
2N6351 Preview
Microchip Technology
TRANS NPN DARL 150V 5A TO33
$33.39
Available to order
Reference Price (USD)
1+
$33.39000
500+
$33.0561
1000+
$32.7222
1500+
$32.3883
2000+
$32.0544
2500+
$31.7205
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Microchip Technology 2N6351 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
2N6351

2N6351

$33.39

Product details

The 2N6351 from Microchip Technology is a high-performance Bipolar Junction Transistor (BJT) designed for reliable amplification and switching applications. As part of the Discrete Semiconductor Products category, this single BJT transistor delivers exceptional efficiency and durability. Its robust construction ensures stable operation under varying electrical conditions, making it a versatile choice for engineers and designers. Whether you're working on low-power circuits or high-frequency applications, the 2N6351 offers consistent performance with minimal distortion. The transistor's compact design allows for easy integration into various circuit layouts, saving valuable board space. With its excellent thermal stability and low noise characteristics, this BJT is ideal for precision electronic systems. Upgrade your projects with the 2N6351 and experience superior signal processing capabilities. For pricing and availability, submit an inquiry today to explore how this transistor can enhance your designs.

General specs

  • Product Status: Active
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AC, TO-33-4 Metal Can
  • Supplier Device Package: TO-33

Viewed products

onsemi

KSD882YSTU

$0.00 (not set)
onsemi

MPQ6842

$0.00 (not set)
NXP USA Inc.

2PC4617R,115

$0.00 (not set)
Nexperia USA Inc.

BC857C,235

$0.00 (not set)
Harris Corporation

HC4P5504ALC-9

$0.00 (not set)
onsemi

NJVMJD45H11D3T4G

$0.00 (not set)
onsemi

2SC4616E-TL-E

$0.00 (not set)
Diodes Incorporated

ZXTN23015CFHTA

$0.00 (not set)
STMicroelectronics

BD139

$0.00 (not set)
onsemi

MMBT5087LT3G

$0.00 (not set)
Top