APT33GF120LRDQ2G
Microchip Technology
Microchip Technology
IGBT 1200V 64A 357W TO264
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APT33GF120LRDQ2G
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Product details
Upgrade your power electronics with the APT33GF120LRDQ2G single IGBT transistor from Microchip Technology. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The APT33GF120LRDQ2G features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the APT33GF120LRDQ2G delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 64 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
- Power - Max: 357 W
- Switching Energy: 1.315mJ (on), 1.515mJ (off)
- Input Type: Standard
- Gate Charge: 170 nC
- Td (on/off) @ 25°C: 14ns/185ns
- Test Condition: 800V, 25A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 [L]
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