APT35GP120B2D2G
Microchip Technology
Microchip Technology
IGBT PT COMBI 1200V 35A TO-247
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APT35GP120B2D2G
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Product details
The APT35GP120B2D2G from Microchip Technology is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the APT35GP120B2D2G ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the APT35GP120B2D2G and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 96 A
- Current - Collector Pulsed (Icm): 140 A
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
- Power - Max: 540 W
- Switching Energy: 1mJ (on), 1.185mJ (off)
- Input Type: Standard
- Gate Charge: 150 nC
- Td (on/off) @ 25°C: 14ns, 99ns
- Test Condition: 800V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: T-MAX™ [B2]
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