Shopping cart

Subtotal: $0.00

APTM10HM19FT3G

Microchip Technology
APTM10HM19FT3G Preview
Microchip Technology
MOSFET 4N-CH 100V 70A SP3
$89.91
Available to order
Reference Price (USD)
100+
$52.05740
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Microchip Technology APTM10HM19FT3G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
APTM10HM19FT3G

APTM10HM19FT3G

$89.91

Product details

The APTM10HM19FT3G by Microchip Technology is a premium MOSFET array in the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays. This product is engineered for high-efficiency power switching, making it ideal for advanced electronic systems.\n\nNotable features of the APTM10HM19FT3G include optimized switching performance, low on-resistance, and excellent thermal conductivity. The array configuration allows for compact and efficient designs, reducing overall system complexity. Its high reliability ensures long-term performance in various applications.\n\nApplications include data centers, automotive infotainment, and portable devices. Data centers benefit from its efficiency in power distribution. Automotive infotainment systems rely on its performance for audio and display controls. Portable devices utilize its compact size and low power consumption.\n\nExplore the benefits of the APTM10HM19FT3G. Request a quote today to learn more about how it can enhance your designs. Our team is ready to assist with your technical and procurement needs.

General specs

  • Product Status: Active
  • FET Type: 4 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3

Viewed products

Toshiba Semiconductor and Storage

SSM6N37FU,LF

$0.00 (not set)
Vishay Siliconix

SI7994DP-T1-GE3

$0.00 (not set)
EPC

EPC2102

$0.00 (not set)
onsemi

NTLTD7900ZR2G

$0.00 (not set)
Vishay Siliconix

SI1922EDH-T1-BE3

$0.00 (not set)
Diodes Incorporated

DMN2041UVT-13

$0.00 (not set)
Rohm Semiconductor

QS8K13TCR

$0.00 (not set)
Fairchild Semiconductor

FDY4001CZ

$0.00 (not set)
Vishay Siliconix

SI4946BEY-T1-E3

$0.00 (not set)
Renesas Electronics America Inc

UPA3753GR-E1-AX

$0.00 (not set)
Top