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JANS2N2218AL

Microchip Technology
JANS2N2218AL Preview
Microchip Technology
SMALL-SIGNAL BJT
$118.10
Available to order
Reference Price (USD)
1+
$118.09500
500+
$116.91405
1000+
$115.7331
1500+
$114.55215
2000+
$113.3712
2500+
$112.19025
Exquisite packaging
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TNT 2-6 days
EMS 3-7 days

Microchip Technology JANS2N2218AL is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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JANS2N2218AL

JANS2N2218AL

$118.10

Product details

Upgrade your electronic designs with the JANS2N2218AL, a high-reliability Bipolar Junction Transistor from Microchip Technology. This single BJT in the Discrete Semiconductor Products range offers exceptional linear amplification characteristics for precision analog circuits. The device features low harmonic distortion and excellent phase response, making it ideal for audio and instrumentation applications. Its robust construction withstands electrical stress and thermal cycling without performance degradation. The JANS2N2218AL demonstrates consistent current gain across its operating range, simplifying circuit stabilization. Common uses include microphone preamplifiers, medical monitoring equipment, and precision voltage references. Broadcast systems, laboratory instruments, and high-end audio components benefit from this transistor's clean signal reproduction. Microchip Technology subjects each JANS2N2218AL unit to comprehensive electrical testing before shipment. The transistor's lead frame design optimizes thermal dissipation in high-duty-cycle applications. With its combination of technical excellence and manufacturing quality, the JANS2N2218AL delivers outstanding value. Contact our sales team through the website inquiry form to discuss your specific requirements and procurement options.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5

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