JANS2N3810L
Microchip Technology

Microchip Technology
PNP TRANSISTOR
$91.22
Available to order
Reference Price (USD)
1+
$91.21500
500+
$90.30285
1000+
$89.3907
1500+
$88.47855
2000+
$87.5664
2500+
$86.65425
Exquisite packaging
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Product details
Microchip Technology's JANS2N3810L represents a high-performance solution in Bipolar Junction Transistor (BJT) Arrays for Discrete Semiconductor Products. This advanced component integrates multiple transistors with precisely matched characteristics in a compact package. The JANS2N3810L delivers excellent current handling capacity with uniform performance across all elements. Its design emphasizes thermal stability and parameter consistency. The product features low noise operation for sensitive signal processing applications. With its high current gain, it ensures efficient circuit operation. The JANS2N3810L demonstrates reliable switching characteristics for diverse electronic systems. Medical diagnostic equipment benefits from its precise signal amplification. Consumer electronics utilize its space-saving design for compact devices. Industrial control systems employ its robust performance in harsh environments. The JANS2N3810L also serves critical functions in power distribution systems. Microchip Technology has implemented stringent quality control measures in production. The component's design facilitates optimal thermal management during operation. Its lead-free composition complies with global environmental regulations. Engineers value its consistent performance in both prototype and mass production scenarios. The JANS2N3810L offers a reliable solution for demanding electronic applications. Its versatility makes it suitable for various circuit design requirements. Contact us today through our online portal to inquire about pricing and availability for your projects.
General specs
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6