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JANSL2N3019

Microchip Technology
JANSL2N3019 Preview
Microchip Technology
RH SMALL-SIGNAL BJT
$118.35
Available to order
Reference Price (USD)
1+
$118.35000
500+
$117.1665
1000+
$115.983
1500+
$114.7995
2000+
$113.616
2500+
$112.4325
Exquisite packaging
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Microchip Technology JANSL2N3019 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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JANSL2N3019

JANSL2N3019

$118.35

Product details

Upgrade your electronic designs with the JANSL2N3019, a high-reliability Bipolar Junction Transistor from Microchip Technology. This single BJT in the Discrete Semiconductor Products range offers exceptional linear amplification characteristics for precision analog circuits. The device features low harmonic distortion and excellent phase response, making it ideal for audio and instrumentation applications. Its robust construction withstands electrical stress and thermal cycling without performance degradation. The JANSL2N3019 demonstrates consistent current gain across its operating range, simplifying circuit stabilization. Common uses include microphone preamplifiers, medical monitoring equipment, and precision voltage references. Broadcast systems, laboratory instruments, and high-end audio components benefit from this transistor's clean signal reproduction. Microchip Technology subjects each JANSL2N3019 unit to comprehensive electrical testing before shipment. The transistor's lead frame design optimizes thermal dissipation in high-duty-cycle applications. With its combination of technical excellence and manufacturing quality, the JANSL2N3019 delivers outstanding value. Contact our sales team through the website inquiry form to discuss your specific requirements and procurement options.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5

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