JANSR2N3019
Microchip Technology
Microchip Technology
TRANS NPN 80V 1A TO5
$79.66
Available to order
Reference Price (USD)
1+
$79.66500
500+
$78.86835
1000+
$78.0717
1500+
$77.27505
2000+
$76.4784
2500+
$75.68175
Exquisite packaging
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JANSR2N3019
$79.66
Product details
The JANSR2N3019 from Microchip Technology is a premium-grade Bipolar Junction Transistor designed for demanding Discrete Semiconductor Products applications. This single BJT combines high current capability with fast switching characteristics for versatile circuit implementation. Its advanced epitaxial base structure ensures uniform current distribution and thermal management. The transistor exhibits low saturation voltage, reducing power dissipation in switching applications. Engineers value the JANSR2N3019 for its tight parameter tolerances and batch-to-batch consistency. Typical circuit implementations include class AB amplifiers, electronic switches, and voltage-controlled oscillators. Automotive electronics, power tools, and industrial control systems commonly utilize this reliable component. The JANSR2N3019 meets stringent quality standards with comprehensive production testing and failure analysis. Its moisture sensitivity level (MSL) rating accommodates standard manufacturing processes. Microchip Technology supports the JANSR2N3019 with detailed application notes and SPICE models for design simulation. For volume pricing, lead time information, or technical consultation, please submit your inquiry through our responsive online system.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
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