LXP1002-23-0
Microchip Technology
Microchip Technology
SI PIN NON HERMETIC EPSM SMT
$3.86
Available to order
Reference Price (USD)
1+
$3.86000
500+
$3.8214
1000+
$3.7828
1500+
$3.7442
2000+
$3.7056
2500+
$3.667
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LXP1002-23-0
$3.86
Product details
Upgrade your RF designs with the LXP1002-23-0 from Microchip Technology, a premium offering in Discrete Semiconductor Products. This high-frequency diode provides exceptional performance in signal processing and power control applications. Its innovative design minimizes intermodulation distortion while maximizing power efficiency. The component delivers stable operation across wide frequency ranges with consistent parameters. Engineers value the LXP1002-23-0 for its excellent thermal stability and low noise characteristics. The diode's rugged construction ensures reliable performance in challenging environmental conditions. Its optimized junction geometry provides superior RF characteristics compared to standard diodes. Technical advantages include high third-order intercept point and excellent harmonic suppression. These qualities make it perfect for LTE/5G small cell equipment, microwave backhaul systems, and aerospace telemetry applications. Automotive infotainment systems benefit from its clean signal processing, while industrial sensors leverage its accurate detection capabilities. Scientific instruments requiring precise frequency control achieve better results with this component. Microchip Technology has engineered the LXP1002-23-0 to address the most demanding RF challenges. Comprehensive testing validates each unit's performance before shipment. When your application requires uncompromising quality in RF components, this diode delivers exceptional value. Request a quotation or technical consultation through our website's inquiry system. Learn how the LXP1002-23-0 can optimize performance in your specific application scenario.
General specs
- Product Status: Active
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 50V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.32pF @ 50V, 1MHz
- Resistance @ If, F: 4Ohm @ 100mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: -55°C ~ 125°C
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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