MAQ4123YME-TRVAO
Microchip Technology
Microchip Technology
IC MOSFET DVR 3A L-SIDE 8SOIC
$2.88
Available to order
Reference Price (USD)
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$1.44000
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$1.29000
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$1.16000
100+
$1.05500
250+
$0.95500
500+
$0.85500
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MAQ4123YME-TRVAO
$2.88
Product details
Introducing the MAQ4123YME-TRVAO from Microchip Technology, a state-of-the-art PMIC - Gate Driver designed for precision power management in advanced electronic systems. This high-performance IC delivers superior gate driving capability for power semiconductors, ensuring efficient energy conversion across various applications. The MAQ4123YME-TRVAO features a unique combination of high noise immunity and fast switching characteristics, making it ideal for challenging operating environments. Its intelligent control algorithms optimize switching behavior to minimize power losses while maintaining system reliability. The gate driver's robust construction withstands voltage transients and electromagnetic interference, crucial for industrial power systems. In renewable energy applications, the MAQ4123YME-TRVAO plays a vital role in wind turbine converters and photovoltaic inverters. For transportation systems, it provides reliable control for railway traction converters and electric bus powertrains. The component also excels in medical power supplies, where stable performance is critical for patient safety. The MAQ4123YME-TRVAO incorporates advanced diagnostic functions that enable predictive maintenance in industrial settings. Its configurable output stages accommodate various power device technologies, from silicon MOSFETs to wide-bandgap semiconductors. The gate driver's low quiescent current makes it suitable for battery-powered applications requiring energy efficiency. Additional features include programmable soft-start functionality and active Miller clamp protection. These capabilities make the MAQ4123YME-TRVAO particularly effective in high-power audio amplifiers and RF energy systems. For data acquisition systems, the gate driver ensures clean power delivery to sensitive measurement circuits. Discover the advantages of this versatile gate driver solution - our technical experts are ready to assist with your specific application requirements. Visit our website to submit your inquiry and access detailed product documentation.
General specs
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 11ns, 11ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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