MG1006-83B
Microchip Technology
Microchip Technology
GAAS GUNN EPI DOWN HERMETIC STUD
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MG1006-83B
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Product details
The MG1006-83B from Microchip Technology represents excellence in RF diode technology within Discrete Semiconductor Products. This component offers superior performance in frequency conversion and signal detection applications. Its advanced semiconductor design ensures low distortion and high linearity across operational bands. The diode provides excellent impedance characteristics for optimal power transfer in RF circuits. You'll appreciate its consistent performance parameters under varying signal conditions and environmental factors. The MG1006-83B features enhanced reliability through robust construction and careful material selection. Its compact package allows for flexible circuit board layout while maintaining signal integrity. Technical highlights include fast response time and excellent noise immunity. These characteristics make it ideal for microwave radio links, satellite communication terminals, and radar warning receivers. Commercial applications include smart grid monitoring systems and industrial process control equipment. Medical telemetry devices benefit from its accurate signal processing capabilities. Microchip Technology has designed the MG1006-83B to meet the needs of professional RF engineers. Stringent quality control measures ensure each component meets published specifications. For system designers seeking reliable high-frequency components, this diode offers an outstanding solution. Visit our online catalog to access detailed specifications and application guidelines. Contact our sales team to discuss pricing and availability for your project requirements.
General specs
- Product Status: Active
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 10V
- Current - Max: 700 mA
- Capacitance @ Vr, F: -
- Resistance @ If, F: -
- Power Dissipation (Max): 100 mW
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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