SG2013J
Microchip Technology
Microchip Technology
DRIVER - MEDIUM CURRENT ARRAY, H
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Microchip Technology SG2013J is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SG2013J
$0.00
Product details
The SG2013J from Microchip Technology sets new standards in Bipolar Junction Transistor (BJT) Array technology for Discrete Semiconductor Products. This advanced component integrates multiple transistors with precisely matched characteristics in a space-saving package. Designed for demanding electronic applications, it offers superior current amplification and switching capabilities. The SG2013J features excellent parameter consistency across all transistors in the array. Its robust construction ensures reliable operation in both pulsed and continuous modes. The product's optimized thermal design prevents performance degradation under load. With its low collector-emitter saturation voltage, it maximizes energy efficiency in circuits. The SG2013J is ideal for applications requiring synchronized transistor operation. Industrial motor control systems benefit from its precise switching characteristics. LED lighting drivers utilize its efficient current regulation capabilities. Battery management systems employ it for accurate charge/discharge control. The SG2013J also finds use in sophisticated RF amplification circuits. Microchip Technology has incorporated advanced manufacturing techniques to ensure product reliability. Its compatibility with automated assembly processes streamlines production integration. The component meets international standards for quality and environmental compliance. Engineers trust the SG2013J for critical applications where performance consistency is paramount. Its versatility makes it suitable for both prototyping and mass production scenarios. Discover how this BJT Array can enhance your electronic designs by contacting us for more information.
General specs
- Product Status: Active
- Transistor Type: 7 NPN Darlington
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.9V @ 600µA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 900 @ 500mA, 2V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 16-CDIP (0.300", 7.62mm)
- Supplier Device Package: 16-CERDIP
Viewed products